TT2042 no.9055-1/4 application suitable for use in control motor drivers, printer hammer drivers, relay drivers, audio output and constant-voltage regulators. features high dc current gain. wide aso. low saturation voltage. adoption of mbit process. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo 180 v collector-to-emitter voltage v ceo 160 v emitter-to-base voltage v ebo 6v collector current i c 10 a collector current (pulse) i cp 16 a collector dissipation p c 2.5 w tc=25 c110w junction temperature tj 150 c storage temperature tstg --55 to +150 c sanyo semiconductors data sheet 32509ia ms im tb-00001695 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. www.semiconductor-sanyo.com/network TT2042 npn triple diffused planar silicon darlington transistor driver applications ordering number : en9055
TT2042 no.9055-2/4 electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =180v, i e =0a 0.1 ma emitter cutoff current i ebo v eb =6v, i c =0a 10 ma dc current gain h fe v ce =5v, i c =6.5a 5000 gain-bandwidth product f t v ce =5v, i c =6.5a 15 mhz collector-to-emitter saturation voltage v ce (sat) i c =5.5a, i b =11ma 1.5 v base-to-emitter saturation voltage v be (sat) i c =5.5a, i b =11ma 2.3 v collector-to-base breakdown voltage v (br)cbo i c =1ma, i e =0a 180 v collector sustain voltage v ceo(sus) i c =100ma, i b =0a 160 v turn-on time t on see specified test circuit. 0.9 s storage time t stg see specified test circuit. 8.0 s fall time t f see specified test circuit. 3.0 s package dimensions switching time test circuit unit : mm (typ) 7503-003 14.0 15.6 4.8 2.0 20.0 20.0 3.5 2.6 1.2 1.3 15.0 3.2 1.4 1.6 1.0 0.6 5.45 5.45 123 0.6 2.0 1 : base 2 : collector 3 : emitter sanyo : to-3pb v be = --5v v cc =50v input output 100 f 470 f 50 r b r1 r2 r l v r i c =500i b1 =500i b2 =6.5a t. u. t ++ pw=50 s d.c. 1% i b1 i b2 collector-to-emitter voltage, v ce -- v collector current, i c -- a base-to-emitter voltage, v be -- v i c -- v be collector current, i c -- a i c -- v ce 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 3.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 0 1 2 3 4 5 6 7 8 9 10 0 it06685 it06686 1.0 0.5 1.5 2.5 3.5 4.5 3.0 2.0 4.0 5.0 i b =0 a 400 a 600 a 800 a ta=120 c 25 c --40 c v ce =5v 2ma 1ma from above 10ma 9ma 8ma 7ma 6ma 5ma 4ma 3ma
TT2042 no.9055-3/4 ambient temperature, ta -- c collector dissipation, p c -- w p c -- ta case temperature, tc -- c collector dissipation, p c -- w p c -- tc collector-to-emitter voltage, v ce -- v collector current, i c -- a forward bias a s o tc=25 c single pulse collector current, i c -- a v be (sat) -- i c base-to-emitter saturation voltage, v be (sat) -- v no heat sink 0.1 10 7 5 3 2 7 5 3 2 1.0 3 2 0 it06684 20 40 60 80 100 110 120 140 0 20 40 60 80 100 120 140 160 0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 140 160 it06683 it06690 1.0 10 23 57 23 57 23 100 p t =1ms 10ms 100ms dc operation i cp =16a i c =10a 0.1 1.0 23 57 23 57 10 it06689 5 1.0 5 2 3 7 ta= -- 4 0 c 25 c i c / i b =500 120 c v ce (sat) -- i c collector current, i c -- a h fe -- i c dc current gain, h fe collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v 0.1 1.0 23 57 23 57 10 it06687 it06688 23 57 23 57 1.0 0.1 10 100 10000 2 3 5 100000 7 1000 2 3 5 7 2 3 5 7 0.1 1.0 5 7 2 3 5 7 2 3 10 ta=120 c 25 c --40 c ta= --40 c 25 c v ce =5v i c / i b =500 120 c
TT2042 no.9055-4/4 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party?s intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps this catalog provides information as of march, 2009. specifications and information herein are subject to change without notice.
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